Electrical stress of graphene field effect transistor under different bias voltages Reliability studies
Wang SongWen; Guo HongXia; Ma Teng; Lei ZhiFeng; Ma WuYing; Zhong XiangLi; Zhang Hong; Lu XiaoJie; Li JiFang; Fang JunLin; Zeng TianXiang
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.75.20241365
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Cite this source
Wang SongWen; Guo HongXia; Ma Teng; Lei ZhiFeng; Ma WuYing; Zhong XiangLi; Zhang Hong; Lu XiaoJie; Li JiFang; Fang JunLin; Zeng TianXiang. Electrical stress of graphene field effect transistor under different bias voltages Reliability studies. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.75.20241365