A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement
Yan Li; Jiayi Zhang; Haoyan Liu; Yongliang Li
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Access
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/access.2025.3602811
The original publisher provides the full text and its access options.
Cite this source
Yan Li; Jiayi Zhang; Haoyan Liu; Yongliang Li. A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement. IEEE Access. 2025. https://doi.org/10.1109/access.2025.3602811