Electrostatically formed nanowire (EFN) transistor—An ultrasensitive VOC and gas sensor
Anwesha Mukherjee; Idan Shem Tov; Yossi Rosenwaks
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Reviews
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0167546
The original publisher provides the full text and its access options.
Cite this source
Anwesha Mukherjee; Idan Shem Tov; Yossi Rosenwaks. Electrostatically formed nanowire (EFN) transistor—An ultrasensitive VOC and gas sensor. Applied Physics Reviews. 2024-02-07. https://doi.org/10.1063/5.0167546