Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)
Omendra Kr Singh; Vaithiyanathan Dhandapani; Baljit Kaur
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s11664-024-10997-y
The original publisher provides the full text and its access options.
Cite this source
Omendra Kr Singh; Vaithiyanathan Dhandapani; Baljit Kaur. Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET). Journal of Electronic Materials. 2024-03-26. https://doi.org/10.1007/s11664-024-10997-y