Applicability of Channel Doping Gradient in the Design of a Short Channel (0.1 µm) LDMOS Transistor for Integrated Power and RF Applications
Sahar Fayaz; Najeeb-ud-din Hakim; G. M. Rather
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Transactions on Electrical and Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s42341-024-00530-7
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Cite this source
Sahar Fayaz; Najeeb-ud-din Hakim; G. M. Rather. Applicability of Channel Doping Gradient in the Design of a Short Channel (0.1 µm) LDMOS Transistor for Integrated Power and RF Applications. Transactions on Electrical and Electronic Materials. 2024-04-04. https://doi.org/10.1007/s42341-024-00530-7