High Current Gain MoS 2 Bipolar Junction Transistor Based on Metal–Semiconductor Schottky Contacts
Shichao Wang; Qingliang Liu; Wencheng Niu; Xuming Zou; Xingqiang Liu; Jingli Wang; Jinshui Miao; Zhenyu Yang; Fukai Shan; Lei Liao
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Nano Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.nanolett.4c04722
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Cite this source
Shichao Wang; Qingliang Liu; Wencheng Niu; Xuming Zou; Xingqiang Liu; Jingli Wang; Jinshui Miao; Zhenyu Yang; Fukai Shan; Lei Liao. High Current Gain MoS 2 Bipolar Junction Transistor Based on Metal–Semiconductor Schottky Contacts. Nano Letters. 2024-12-23. https://doi.org/10.1021/acs.nanolett.4c04722