Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors
Sofie Vogt; Daniel Splith; Sebastian Köpp; Peter Schlupp; Clemens Petersen; Holger von Wenckstern; Marius Grundmann
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0220211
The original publisher provides the full text and its access options.
Cite this source
Sofie Vogt; Daniel Splith; Sebastian Köpp; Peter Schlupp; Clemens Petersen; Holger von Wenckstern; Marius Grundmann. Lateral α-Ga2O3:Zr metal–semiconductor field effect transistors. Applied Physics Letters. 2024-12-16. https://doi.org/10.1063/5.0220211