High Mobility and Robust Top-Gate In₂O₃ Thin Film Transistor by Ozone-Based Treatment
Ching-Shuan Huang; Tung-Cheng Shih; Che-Chi Shih; Wu-Wei Tsai; Chien-Wei Chen; Yu-Hsuan Yu; Wei-Yen Woon; Chao-Hsin Chien
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal of the Electron Devices Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jeds.2025.3627495
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Cite this source
Ching-Shuan Huang; Tung-Cheng Shih; Che-Chi Shih; Wu-Wei Tsai; Chien-Wei Chen; Yu-Hsuan Yu; Wei-Yen Woon; Chao-Hsin Chien. High Mobility and Robust Top-Gate In₂O₃ Thin Film Transistor by Ozone-Based Treatment. IEEE Journal of the Electron Devices Society. 2025. https://doi.org/10.1109/jeds.2025.3627495