Research on the Oscillation Mechanism of Insulated-Gate Bipolar Transistor in Short-Circuit Test
Li Weibang; Dong Zhiyi; Zhou Liang; He Xin
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 International Conference on HVDC (HVDC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/hvdc62448.2024.10722942
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Cite this source
Li Weibang; Dong Zhiyi; Zhou Liang; He Xin. Research on the Oscillation Mechanism of Insulated-Gate Bipolar Transistor in Short-Circuit Test. 2024 International Conference on HVDC (HVDC). 2024-08-08. https://doi.org/10.1109/hvdc62448.2024.10722942