Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Conference paper

Ternary Memory Composed of Ferroelectric Field-Effect Transistor Based on Dynamic Logic

Zhichao Dong; Yinshui Xia; Yang Li; Zhaohui Yang

Published
Publisher
IEEE
Journal / collection
2024 3rd International Conference on Electronics and Information Technology (EIT)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/eit63098.2024.10762250

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Zhichao Dong; Yinshui Xia; Yang Li; Zhaohui Yang. Ternary Memory Composed of Ferroelectric Field-Effect Transistor Based on Dynamic Logic. 2024 3rd International Conference on Electronics and Information Technology (EIT). 2024-09-20. https://doi.org/10.1109/eit63098.2024.10762250

Download RIS