Long-Lived Topological Flatband Excitons in Semiconductor Moiré Heterostructures: A Bosonic Kane-Mele Model Platform
Ming Xie; Mohammad Hafezi; Sankar Das Sarma
- Published
- Publisher
- American Physical Society (APS)
- Journal / collection
- Physical Review Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1103/physrevlett.133.136403
The original publisher provides the full text and its access options.
Cite this source
Ming Xie; Mohammad Hafezi; Sankar Das Sarma. Long-Lived Topological Flatband Excitons in Semiconductor Moiré Heterostructures: A Bosonic Kane-Mele Model Platform. Physical Review Letters. 2024-09-26. https://doi.org/10.1103/physrevlett.133.136403