Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure

Payal Taya; Salahuddin Khan; J. Jayabalan; Asha Singh; Vikash K. Singh; Vijay K. Dixit; Tarun K. Sharma

Published
Publisher
Elsevier BV
Journal / collection
Journal of Luminescence
Research area
Semiconductors
Source type
Journal article
DOI
10.1016/j.jlumin.2024.120997

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Payal Taya; Salahuddin Khan; J. Jayabalan; Asha Singh; Vikash K. Singh; Vijay K. Dixit; Tarun K. Sharma. Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure. Journal of Luminescence. 2025-03. https://doi.org/10.1016/j.jlumin.2024.120997

Download RIS