Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope
Masanobu Yoshikawa; Masataka Murakami; Tomoyuki Ushida; Junichiro Samejima; Kana Mitsuzawa; Nobuhiro Matoba; Minwho Lim; Oleg Rusch; Mathias Rommel
- Published
- Publisher
- Wiley
- Journal / collection
- Journal of Raman Spectroscopy
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/jrs.6685
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Cite this source
Masanobu Yoshikawa; Masataka Murakami; Tomoyuki Ushida; Junichiro Samejima; Kana Mitsuzawa; Nobuhiro Matoba; Minwho Lim; Oleg Rusch; Mathias Rommel. Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope. Journal of Raman Spectroscopy. 2024-05-25. https://doi.org/10.1002/jrs.6685