Heavy ion induce single event transient effects in SOI transistor
RUI YANG
- Published
- Publisher
- SPIE
- Journal / collection
- International Conference on Optics, Electronics, and Communication Engineering (OECE 2024)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1117/12.3049904
The original publisher provides the full text and its access options.
Cite this source
RUI YANG. Heavy ion induce single event transient effects in SOI transistor. International Conference on Optics, Electronics, and Communication Engineering (OECE 2024). 2024-11-12. https://doi.org/10.1117/12.3049904