On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory
Haotian Xu; Jianyi Yang; Thomas Kämpfe; Cheng Zhuo; Kai Ni; Xunzhao Yin
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2023.3334756
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Cite this source
Haotian Xu; Jianyi Yang; Thomas Kämpfe; Cheng Zhuo; Kai Ni; Xunzhao Yin. On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory. IEEE Electron Device Letters. 2024-01. https://doi.org/10.1109/led.2023.3334756