Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors
J. W. Liu; T. Teraji; B. Da; Y. Koide
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0194424
The original publisher provides the full text and its access options.
Cite this source
J. W. Liu; T. Teraji; B. Da; Y. Koide. Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 2024-02-12. https://doi.org/10.1063/5.0194424