Design of 3 bit/cell NAND Memory Array Based on Ferroelectric Field Effect Transistor
Albert Daimari; Ankit Chakusaru Deori; Amab Ratna Pawe; Ratul Kumar Baruah
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/vlsid60093.2024.00026
The original publisher provides the full text and its access options.
Cite this source
Albert Daimari; Ankit Chakusaru Deori; Amab Ratna Pawe; Ratul Kumar Baruah. Design of 3 bit/cell NAND Memory Array Based on Ferroelectric Field Effect Transistor. 2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID). 2024-01-06. https://doi.org/10.1109/vlsid60093.2024.00026