Steep-Slope MoS2 and WSe2 Field-Effect Transistors Enabled by Ag/SiO2 Atomic Threshold Switches for Static-Power-Suppressed Complementary Inverters
Junmo Park; Hanggyo Jung; Jaekyoung Park; Heesoo Lee; Donggi Lee; Minseo Jang; Minseok Jang; Cheol-Woong Yang; Jin-Hong Park; Jongwook Jeon; Hyoungsub Kim
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.6c13656
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Cite this source
Junmo Park; Hanggyo Jung; Jaekyoung Park; Heesoo Lee; Donggi Lee; Minseo Jang; Minseok Jang; Cheol-Woong Yang; Jin-Hong Park; Jongwook Jeon; Hyoungsub Kim. Steep-Slope MoS2 and WSe2 Field-Effect Transistors Enabled by Ag/SiO2 Atomic Threshold Switches for Static-Power-Suppressed Complementary Inverters. ACS Applied Materials & Interfaces. 2026-10-01. https://doi.org/10.1021/acsami.6c13656