Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS 2 Transistor Operating in Subthreshold Regime
Eunyeong Yang; Sekwon Hong; Jiwon Ma; Sang-Joon Park; Dae Kyu Lee; Tanmoy Das; Tae-Jun Ha; Joon Young Kwak; Jiwon Chang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.4c04316
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Cite this source
Eunyeong Yang; Sekwon Hong; Jiwon Ma; Sang-Joon Park; Dae Kyu Lee; Tanmoy Das; Tae-Jun Ha; Joon Young Kwak; Jiwon Chang. Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS 2 Transistor Operating in Subthreshold Regime. ACS Nano. 2024-08-15. https://doi.org/10.1021/acsnano.4c04316