A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping
Zijian Zhao; Yixin Qin; Jiahui Duan; YuShan Lee; Suhwan Lim; Kijoon Kim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Vijaykrishnan Narayanan; Kai Ni
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3477510
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Cite this source
Zijian Zhao; Yixin Qin; Jiahui Duan; YuShan Lee; Suhwan Lim; Kijoon Kim; Kwangsoo Kim; Wanki Kim; Daewon Ha; Vijaykrishnan Narayanan; Kai Ni. A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping. IEEE Electron Device Letters. 2024-12. https://doi.org/10.1109/led.2024.3477510