Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel
Potaraju Yugender; Rudra Sankar Dhar; Swagat Nanda; Kuleen Kumar; Pandurengan Sakthivel; Arun Thirumurugan
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi15121455
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Cite this source
Potaraju Yugender; Rudra Sankar Dhar; Swagat Nanda; Kuleen Kumar; Pandurengan Sakthivel; Arun Thirumurugan. Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. Micromachines. 2024-11-29. https://doi.org/10.3390/mi15121455