Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique
Jiawei Cui; Maojun Wang; Yanlin Wu; Junjie Yang; Han Yang; Jingjing Yu; Teng Li; Xuelin Yang; Xiaosen Liu; Kai Cheng; Jinyan Wang; Bo Shen; Jin Wei
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2023.3341413
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Cite this source
Jiawei Cui; Maojun Wang; Yanlin Wu; Junjie Yang; Han Yang; Jingjing Yu; Teng Li; Xuelin Yang; Xiaosen Liu; Kai Cheng; Jinyan Wang; Bo Shen; Jin Wei. Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique. IEEE Electron Device Letters. 2024-02. https://doi.org/10.1109/led.2023.3341413