A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors
Fu-Xiang Liang; Shubham Kumar; Kai Ni; Wriddhi Chakraborty; Yogesh Singh Chauhan; Hussam Amrouch; Suman Datta; Michael Niemier; Xiaobo Sharon Hu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3408776
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Cite this source
Fu-Xiang Liang; Shubham Kumar; Kai Ni; Wriddhi Chakraborty; Yogesh Singh Chauhan; Hussam Amrouch; Suman Datta; Michael Niemier; Xiaobo Sharon Hu. A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors. IEEE Transactions on Electron Devices. 2024-07. https://doi.org/10.1109/ted.2024.3408776