Combination-Encoding Content-Addressable Memory Utilizing the Ferroelectric Hf-Zr-O Field-Effect-Transistor Array
Manh-Cuong Nguyen; Eun Chan Park; Rino Choi; Doo Seok Jeong; Daewoong Kwon
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.4c02180
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Cite this source
Manh-Cuong Nguyen; Eun Chan Park; Rino Choi; Doo Seok Jeong; Daewoong Kwon. Combination-Encoding Content-Addressable Memory Utilizing the Ferroelectric Hf-Zr-O Field-Effect-Transistor Array. ACS Applied Electronic Materials. 2025-03-06. https://doi.org/10.1021/acsaelm.4c02180