Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory

Eunyoung Park; Hyun-Yong Yu

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Journal of the Electron Devices Society
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/jeds.2024.3418212

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Eunyoung Park; Hyun-Yong Yu. Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory. IEEE Journal of the Electron Devices Society. 2024. https://doi.org/10.1109/jeds.2024.3418212

Download RIS