An Analytical Method for Determination of Threshold Voltage of Surrounded Channel Junctionless Field Effect Transistor
Department of Instrumentation Engineering, Central Institute of Technology, Kokrajhar, India; N. Das; K. C. D. Sarma; Department of Instrumentation Engineering, Central Institute of Technology, Kokrajhar, India; R. Swargiary; Department of Instrumentation Engineering, Central Institute of Technology, Kokrajhar, India
- Published
- Publisher
- Sumy State University
- Journal / collection
- Journal of Nano- and Electronic Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.21272/jnep.17(5).05008
The original publisher provides the full text and its access options.
Cite this source
Department of Instrumentation Engineering, Central Institute of Technology, Kokrajhar, India; N. Das; K. C. D. Sarma; Department of Instrumentation Engineering, Central Institute of Technology, Kokrajhar, India; R. Swargiary; Department of Instrumentation Engineering, Central Institute of Technology, Kokrajhar, India. An Analytical Method for Determination of Threshold Voltage of Surrounded Channel Junctionless Field Effect Transistor. Journal of Nano- and Electronic Physics. 2025. https://doi.org/10.21272/jnep.17(5).05008