24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga2O3 grown by mist chemical vapor deposition
Takeru Wakamatsu; Yuki Isobe; Hitoshi Takane; Kentaro Kaneko; Katsuhisa Tanaka
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0231630
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Cite this source
Takeru Wakamatsu; Yuki Isobe; Hitoshi Takane; Kentaro Kaneko; Katsuhisa Tanaka. 24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga2O3 grown by mist chemical vapor deposition. Applied Physics Letters. 2024-11-18. https://doi.org/10.1063/5.0231630