Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications
Geonhui Han; Kyumin Lee; Dongmin Kim; Yoori Seo; Jinwoo Lee; Jinmyung Choi; Dongho Ahn; Sechung Oh; Hyunsang Hwang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2023.3340176
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Cite this source
Geonhui Han; Kyumin Lee; Dongmin Kim; Yoori Seo; Jinwoo Lee; Jinmyung Choi; Dongho Ahn; Sechung Oh; Hyunsang Hwang. Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications. IEEE Electron Device Letters. 2024-02. https://doi.org/10.1109/led.2023.3340176