Doping Dependent Electron Transport Mobility in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As Double Quantum Well Field Effect Transistor Structure
Narayan Sahoo; Ajit Kumar Sahu; Ram Chandra Swain
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edkcon62339.2024.10870622
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Cite this source
Narayan Sahoo; Ajit Kumar Sahu; Ram Chandra Swain. Doping Dependent Electron Transport Mobility in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As Double Quantum Well Field Effect Transistor Structure. 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). 2024-11-30. https://doi.org/10.1109/edkcon62339.2024.10870622