Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction
C. Piotrowicz; B. Mohamad; N. Malbert; S. Bécu; S. Ruel; C. Le Royer
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0205840
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Cite this source
C. Piotrowicz; B. Mohamad; N. Malbert; S. Bécu; S. Ruel; C. Le Royer. Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction. Journal of Applied Physics. 2024-05-01. https://doi.org/10.1063/5.0205840