Effect of the Channel Thickness on the Pbs Reliability and 1/f Noise of the ALD Ultrathin ITO Field-Effect Transistor
Jiaming Zhao; Peiyan Hong; Xuefei Li
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm61175.2025.11041632
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Cite this source
Jiaming Zhao; Peiyan Hong; Xuefei Li. Effect of the Channel Thickness on the Pbs Reliability and 1/f Noise of the ALD Ultrathin ITO Field-Effect Transistor. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2025-03-09. https://doi.org/10.1109/edtm61175.2025.11041632