p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration
Jiqing Lu; Mei Shen; Xuewei Feng; Tian Tan; Haoyue Guo; Longyang Lin; Feichi Zhou; Yida Li
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Nano Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.nanolett.4c03742
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Cite this source
Jiqing Lu; Mei Shen; Xuewei Feng; Tian Tan; Haoyue Guo; Longyang Lin; Feichi Zhou; Yida Li. p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration. Nano Letters. 2024-11-19. https://doi.org/10.1021/acs.nanolett.4c03742