First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory
F. F. Athena; E. Ambrosi; K. Jana; C. H. Wu; J. Hartanto; Y. M. Lee; C. C. Kuo; S. Liu; B. Saini; C. C. Wang; C. F. Hsu; G. Zeevi; X. Wang; J. Kang; E. Pop; T. Y. Lee; P. C. McIntyre; H.-S. P. Wong; X. Y. Bao
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50854.2024.10873499
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Cite this source
F. F. Athena; E. Ambrosi; K. Jana; C. H. Wu; J. Hartanto; Y. M. Lee; C. C. Kuo; S. Liu; B. Saini; C. C. Wang; C. F. Hsu; G. Zeevi; X. Wang; J. Kang; E. Pop; T. Y. Lee; P. C. McIntyre; H.-S. P. Wong; X. Y. Bao. First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873499