Sub-5.1nm Schottky field-effect transistor based on γ -GeSe
ZhiXiong Qi; Pinglan Yan; Zhentao Fu; Jiali Yin; Tao Ouyang; Chaoyu He; Zhansheng Lu; Xi Fu; Chao Tang; Jianxin Zhong; Jin Li
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Physics D: Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6463/adc46c
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Cite this source
ZhiXiong Qi; Pinglan Yan; Zhentao Fu; Jiali Yin; Tao Ouyang; Chaoyu He; Zhansheng Lu; Xi Fu; Chao Tang; Jianxin Zhong; Jin Li. Sub-5.1nm Schottky field-effect transistor based on γ -GeSe. Journal of Physics D: Applied Physics. 2025-04-02. https://doi.org/10.1088/1361-6463/adc46c