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Intrinsic field-effect mobility in thin-film transistor with polycrystalline In 2 O 3 channel based on transfer length method

Takanori Takahashi; Yukiharu Uraoka

Published
Publisher
IOP Publishing
Journal / collection
Applied Physics Express
Research area
Semiconductors
Source type
Journal article
DOI
10.35848/1882-0786/ada19e

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Takanori Takahashi; Yukiharu Uraoka. Intrinsic field-effect mobility in thin-film transistor with polycrystalline In 2 O 3 channel based on transfer length method. Applied Physics Express. 2025-01-01. https://doi.org/10.35848/1882-0786/ada19e

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