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Research literature / Conference paper

Variation of Sensitivity of AlGaN/GaN High Electron Mobility Transistor(HEMT) Based Hydrogen Gas Sensor on Thickness of AlGaN and Mole Fraction of Aluminium

J Rahul; Renuka Kumaran; Lintu Rajan

Published
Publisher
IEEE
Journal / collection
2024 IEEE International Symposium on Smart Electronic Systems (iSES)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/ises63344.2024.00020

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J Rahul; Renuka Kumaran; Lintu Rajan. Variation of Sensitivity of AlGaN/GaN High Electron Mobility Transistor(HEMT) Based Hydrogen Gas Sensor on Thickness of AlGaN and Mole Fraction of Aluminium. 2024 IEEE International Symposium on Smart Electronic Systems (iSES). 2024-12-16. https://doi.org/10.1109/ises63344.2024.00020

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