Contact Resistance Reduction of MoS 2 -Based Field Effect Transistor Using Semimetallic TiS 2 Contact Layer Deposited By Atomic Layer Deposition
Jeongwoo Seo; Hwi Yoon; Sangyoon Lee; Inkyu Sohn; Hyung-jun Kim; Seung-min Chung; Hyungjun Kim
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Meeting Abstracts
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/ma2024-02201810mtgabs
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Cite this source
Jeongwoo Seo; Hwi Yoon; Sangyoon Lee; Inkyu Sohn; Hyung-jun Kim; Seung-min Chung; Hyungjun Kim. Contact Resistance Reduction of MoS 2 -Based Field Effect Transistor Using Semimetallic TiS 2 Contact Layer Deposited By Atomic Layer Deposition. ECS Meeting Abstracts. 2024-11-22. https://doi.org/10.1149/ma2024-02201810mtgabs