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Investigation of stability parameters of a gate-stack junctionless double-gate transistor (GS-JLDGT)-based 6T and 3T SRAM in the presence of traps

Neha Garg; Yogesh Pratap; Sneha Kabra

Published
Publisher
Springer Science and Business Media LLC
Journal / collection
Journal of Computational Electronics
Research area
Semiconductors
Source type
Journal article
DOI
10.1007/s10825-025-02285-7

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Neha Garg; Yogesh Pratap; Sneha Kabra. Investigation of stability parameters of a gate-stack junctionless double-gate transistor (GS-JLDGT)-based 6T and 3T SRAM in the presence of traps. Journal of Computational Electronics. 2025-02-25. https://doi.org/10.1007/s10825-025-02285-7

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