Field-effect transistor and giant magnetoresistance effect based on optically induced antichiral edge state in graphene
Xiao-Long Lü; Gang Liu; Jia-En Yang; Hang Xie
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0189578
The original publisher provides the full text and its access options.
Cite this source
Xiao-Long Lü; Gang Liu; Jia-En Yang; Hang Xie. Field-effect transistor and giant magnetoresistance effect based on optically induced antichiral edge state in graphene. Applied Physics Letters. 2024-02-12. https://doi.org/10.1063/5.0189578