Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence
Kuntavai Thangavel; Prasanth Aruchamy; Prasad Joghee; Chandrasekar Palanisamy
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400448
The original publisher provides the full text and its access options.
Cite this source
Kuntavai Thangavel; Prasanth Aruchamy; Prasad Joghee; Chandrasekar Palanisamy. Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence. physica status solidi (a). 2024-10-08. https://doi.org/10.1002/pssa.202400448