Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)
Tishk International University, Computer Engineering Department, Erbil, Kurdistan Region, Iraq; Y. Hashim
- Published
- Publisher
- Sumy State University
- Journal / collection
- Journal of Nano- and Electronic Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.21272/jnep.16(1).01018
The original publisher provides the full text and its access options.
Cite this source
Tishk International University, Computer Engineering Department, Erbil, Kurdistan Region, Iraq; Y. Hashim. Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET). Journal of Nano- and Electronic Physics. 2024. https://doi.org/10.21272/jnep.16(1).01018