Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation
Jiyuan Zhu; Shen Hu; Bojia Chen; Shice Wei; Yu Zhang; Xuefeng Wu; Xingli Zou; Xionggang Lu; Qingqing Sun; David W. Zhang; Li Ji
- Published
- Publisher
- AIP Publishing
- Journal / collection
- The Journal of Chemical Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0188101
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Cite this source
Jiyuan Zhu; Shen Hu; Bojia Chen; Shice Wei; Yu Zhang; Xuefeng Wu; Xingli Zou; Xionggang Lu; Qingqing Sun; David W. Zhang; Li Ji. Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation. The Journal of Chemical Physics. 2024-01-25. https://doi.org/10.1063/5.0188101