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Research literature / Conference paper

ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS

Belarusian State University of Informatics and Radioelectronics; I.Yu. Lovshenko; V.S. Volcheck; Belarusian State University of Informatics and Radioelectronics; P.E. Novikov; Belarusian State University of Informatics and Radioelectronics; K.O. Volchhik; Belarusian State University of Informatics and Radioelectronics

Published
Publisher
Ulyanovsk State Technical University
Journal / collection
Materials of the 27th All-Russian Youth Scientific Conference
Research area
Semiconductors
Source type
Conference paper
DOI
10.61527/appfe-2024.240-242

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Belarusian State University of Informatics and Radioelectronics; I.Yu. Lovshenko; V.S. Volcheck; Belarusian State University of Informatics and Radioelectronics; P.E. Novikov; Belarusian State University of Informatics and Radioelectronics; K.O. Volchhik; Belarusian State University of Informatics and Radioelectronics. ELECTRICAL CHARACTERIZATION OF GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH HZO AND HfO2 FERROELECTRICS. Materials of the 27th All-Russian Youth Scientific Conference. 2024-10-21. https://doi.org/10.61527/appfe-2024.240-242

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