Switching of n- and p-type doping with partial pressure of oxygen gas on few layers MoS2-field effect transistor
Muhammad Shamim Al Mamun; Yasuyuki Sainoo; Tsuyoshi Takaoka; Hiroki Waizumi; Zhipeng Wang; Atsushi Ando; Tadahiro Komeda
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Chemical Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.chemphys.2024.112255
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Cite this source
Muhammad Shamim Al Mamun; Yasuyuki Sainoo; Tsuyoshi Takaoka; Hiroki Waizumi; Zhipeng Wang; Atsushi Ando; Tadahiro Komeda. Switching of n- and p-type doping with partial pressure of oxygen gas on few layers MoS2-field effect transistor. Chemical Physics. 2024-05. https://doi.org/10.1016/j.chemphys.2024.112255