Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures
Ik-Jyae Kim; Jiwoung Choi; Jang-Sik Lee
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c17210
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Cite this source
Ik-Jyae Kim; Jiwoung Choi; Jang-Sik Lee. Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures. ACS Applied Materials & Interfaces. 2024-11-20. https://doi.org/10.1021/acsami.4c17210