Neutron-induced effects on a commercial GaN High Electron Mobility Transistor
Alexis Cristiano Vilas Bôas; Saulo Gabriel Alberton; Paulo Roberto Garcia; Nilberto H. Medina; Vitor Ângelo P. Aguiar; Marco Antônio A. Melo; Roberto Baginski B. Santos; Renato C. Giacomini; Tássio V. Cavalcante; Luis Eduardo Seixas; Saulo Finco; Francisco Rogelio Palomo Pinto; Marcilei Guazzelli
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 38th Symposium on Microelectronics Technology and Devices (SBMicro)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/sbmicro64348.2024.10673863
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Cite this source
Alexis Cristiano Vilas Bôas; Saulo Gabriel Alberton; Paulo Roberto Garcia; Nilberto H. Medina; Vitor Ângelo P. Aguiar; Marco Antônio A. Melo; Roberto Baginski B. Santos; Renato C. Giacomini; Tássio V. Cavalcante; Luis Eduardo Seixas; Saulo Finco; Francisco Rogelio Palomo Pinto; Marcilei Guazzelli. Neutron-induced effects on a commercial GaN High Electron Mobility Transistor. 2024 38th Symposium on Microelectronics Technology and Devices (SBMicro). 2024-09-02. https://doi.org/10.1109/sbmicro64348.2024.10673863