Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature
Chang Liu; Yiqiang Chen; Yuhan Xie; Hongxia Liu; Zongqi Cai
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi15091100
The original publisher provides the full text and its access options.
Cite this source
Chang Liu; Yiqiang Chen; Yuhan Xie; Hongxia Liu; Zongqi Cai. Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature. Micromachines. 2024-08-30. https://doi.org/10.3390/mi15091100