Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/ p -type GaN interface in metal–oxide–semiconductor field-effect transistor
Hiroko Iguchi; Tetsuo Narita; Kenji Ito; Shiro Iwasaki; Emi Kano; Nobuyuki Ikarashi; Kazuyoshi Tomita; Daigo Kikuta
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0214698
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Cite this source
Hiroko Iguchi; Tetsuo Narita; Kenji Ito; Shiro Iwasaki; Emi Kano; Nobuyuki Ikarashi; Kazuyoshi Tomita; Daigo Kikuta. Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/ p -type GaN interface in metal–oxide–semiconductor field-effect transistor. Applied Physics Letters. 2024-07-08. https://doi.org/10.1063/5.0214698