Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor
Hui-Hsuan Li; Shang-Chiun Chen; Yu-Hsien Lin; Chao-Hsin Chien
- Published
- Publisher
- The Electrochemical Society
- Journal / collection
- ECS Journal of Solid State Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1149/2162-8777/ad46f0
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Cite this source
Hui-Hsuan Li; Shang-Chiun Chen; Yu-Hsien Lin; Chao-Hsin Chien. Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor. ECS Journal of Solid State Science and Technology. 2024-05-01. https://doi.org/10.1149/2162-8777/ad46f0