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Research literature / Conference paper

Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs

Sushanta Gautam; Austin M. Szczublewski; Samuel K. Atwimah; Aidan P. Fox; William M. Collings; Tolen Nelson; Daniel G. Georgiev; Raghav Khanna; Andrew D. Koehler; Karl D. Hobart

Published
Publisher
IEEE
Journal / collection
2025 IEEE Applied Power Electronics Conference and Exposition (APEC)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/apec48143.2025.10977219

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Sushanta Gautam; Austin M. Szczublewski; Samuel K. Atwimah; Aidan P. Fox; William M. Collings; Tolen Nelson; Daniel G. Georgiev; Raghav Khanna; Andrew D. Koehler; Karl D. Hobart. Modeling and Characterization of Current and Future 1.2 kV Wide Bandgap Semiconductor-based MOSFETs. 2025 IEEE Applied Power Electronics Conference and Exposition (APEC). 2025-03-16. https://doi.org/10.1109/apec48143.2025.10977219

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